Computer Science ›› 2017, Vol. 44 ›› Issue (Z11): 312-316.doi: 10.11896/j.issn.1002-137X.2017.11A.066

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Research on Wear Leveling Algorithm of NAND FLASH Memory Based on Greedy Strategy

JIA Xin and ZHANG Shao-ping   

  • Online:2018-12-01 Published:2018-12-01

Abstract: NAND FLASH memory is the storage device of sensor node in wireless sensor network.Sensor nodes conti-nuously acquire data from monitoring area,and exchange data between nodes.Frequently writing operations on NAND FLASH memory makes the physical block’s erase number unbalanced and reduces the memory’s life.Accordingly,it will affect the life of the whole sensor network.In this paper,a partition address mapping wear leveling algorithm was proposed to solve this problem.In this algorithm,when data is written into memory,a new physical block for writing operations is selected according to the wear leveling measurement which it computed with greedy methods.And the configuration and experimental data are exchanged between the old physical block and the new physical block,then the old physical block enters a wait state.It is proved by software testing that the algorithm proposed in this paper can effectively optimize the wear leveling of NAND FLASH memory.

Key words: Wireless sensor network,Data storage,NAND FLASH,Greedy strategy,Partition address mapping

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