计算机科学 ›› 2010, Vol. 37 ›› Issue (7): 296-300.
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谢长生，李博，陆晨，王芬
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XIE Chang-sheng,LI Bo,LU Chen,WANG Fen
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摘要： SSD逐渐成为了存储业界研究的热点。提出基于片内SRAM的flash转换层设计—SBAST，通过SRAM缓存更新的页提高了SSD随机写的效率，并减少了不必要的擦除操作。通过SSDsim的仿真实验，论证了该设计的有效性，给出了后续的计划。
关键词: 固态存储器，Flash转换层，擦除操作，随机写
Abstract: There are a lot of issues of the SSD arising in the storage industry. This paper proposed a caching FTL design to improve the efficiency of the SSl)random write and reduce the amount of erasure operations by on-chip SRAM. By simulation experiments of SSDsim,we demonstrated the efficiency of our design. At the end of this paper,I gave my follow-up plan in this work.
Key words: Solid-state drive,曰'I，Erasure operations, Random writes
谢长生，李博，陆晨，王芬. 基于片内SRAM的固态硬盘转换层设计[J]. 计算机科学, 2010, 37(7): 296-300. https://doi.org/
XIE Chang-sheng,LI Bo,LU Chen,WANG Fen. On-chip SRAM-based FTL Design for Solid-state Drive[J]. Computer Science, 2010, 37(7): 296-300. https://doi.org/
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