计算机科学 ›› 2020, Vol. 47 ›› Issue (9): 74-80.doi: 10.11896/jsjkx.190700037
王鑫鑫1, 诸葛晴凤2, 吴林1
WANG Xin-xin1, ZHUGE Qing-feng2, WU Lin1
摘要: 现有非易失性内存文件系统都以DRAM模拟非易失性内存(Non-Volatile Memory,NVM)进行测试,而没有充分考虑两者间的写时延和写磨损特性差异,使得测试结果无法准确反映文件系统在NVM物理设备上的写性能以及对NVM造成的磨损情况。现有NVM模拟器准确度不高,且仿真接口不完备,无法满足内存文件系统对NVM的仿真需求。对此,提出一种面向非易失性内存文件系统的NVM模拟与验证方法。首先,结合非易失性内存文件系统本身的数据读写特性,提出内存文件系统中NVM写时延的模拟方案;其次,跟踪内存文件系统对NVM的读写操作,以验证文件系统对NVM物理设备的写磨损分布情况。选取多个典型内存文件系统实现上述方法。实验结果表明,提出的写时延模拟方法能够将写时延的模拟误差平均降低65%,写磨损验证方法能够较准确地反映内存文件系统对不同粒度NVM页面的磨损分布情况。
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