一种适用于MLC闪存的CCI噪声均衡化算法

计算机科学 ›› 2018, Vol. 45 ›› Issue (6A): 541-544.

一种适用于MLC闪存的CCI噪声均衡化算法

张旋^1,2,周乐²,侯爱华¹

西安理工大学西安710082¹
西安电子科技大学西安710071²

出版日期:2018-06-20 发布日期:2018-08-03
作者简介:张旋(1980-),男,硕士,讲师,主要研究方向为差错控制编码技术、大数据系统中数据的可靠性技术,E-mail:zhangyic2014@163.com;周乐(1990-),男,硕士生,主要研究方向为差错控制编码技术、大数据系统中数据的可靠性技术,E-mail:66877905@qq.com;侯爱华(1969-),女,副教授,主要研究方向为应用数字、空间统计等,E-mail:airrs2015@sina.com。
基金资助:
国家自然科学基金(61271004)资助

CCI Noise Equalization Algorithm for MLC Flash Memory

ZHANG Xuan^1,2,ZHOU Le²,HOU Ai-hua¹

Xi’an University of Technology,Xi’an 710082,China¹
Xidian University,Xi’an 710071,China²

Online:2018-06-20 Published:2018-08-03

摘要/Abstract

摘要： 随着多级单元(Multi-Level Cell,MLC)闪存存储密度的增加,单元间干扰(Cell-to-Cell Interference,CCI)成为影响NAND闪存可靠性的主要噪声。在深入研究MLC闪存模型和CCI噪声模型的基础上,提出了一种MLC闪存的CCI噪声均衡化算法。该算法通过估计CCI干扰强度进而对感知MLC阈值电压进行补偿,可以更准确地读取MLC单元中存储的信息。仿真结果表明,在MLC闪存信道条件下,CCI噪声均衡化算法可以有效减少相邻状态的阈值电压交叉现象,有助于降低原始比特错误率,增强MLC闪存的可靠性。

关键词: 单元间干扰, 多级单元, 均衡化

Abstract: With the increase of MLC (Multi-Level Cell) flash memory density,CCI (Cell-to-Cell Interference) is the dominant noise source which affects the reliability of NAND flash memory.On the research of MLC flash memory mo-del and CCI noise model,an equalization algorithm of CCI noise was proposed for MLC flash memory.This method compensates the sensed threshold voltage of MLC flash memory by estimating the CCI interference,so it is more accurate to read the information stored in MLC.The simulation results show that the CCI noise equalization algorithm can reduce the overlap of the adjacent threshold voltage distribution,which help to reduce the raw bit error rate and enhance the reliability of flash memory.

Key words: Cell-to-cell interference, Equalization, Multi-level cell

中图分类号:

TP301.6

张旋,周乐,侯爱华. 一种适用于MLC闪存的CCI噪声均衡化算法[J]. 计算机科学, 2018, 45(6A): 541-544. https://doi.org/

ZHANG Xuan,ZHOU Le,HOU Ai-hua. CCI Noise Equalization Algorithm for MLC Flash Memory[J]. Computer Science, 2018, 45(6A): 541-544. https://doi.org/

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